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Cited by in F6Publishing
For: Bai G, Niang KM, Robertson J. Preparation of atomic layer deposited vanadium dioxide thin films using tetrakis(ethylmethylamino) vanadium as precursor. Journal of Vacuum Science & Technology A 2020;38:052402. [DOI: 10.1116/6.0000353] [Cited by in Crossref: 4] [Cited by in F6Publishing: 4] [Article Influence: 1.3] [Reference Citation Analysis]
Number Citing Articles
1 Sun K, Wheeler C, Hillier JA, Ye S, Zeimpekis I, Urbani A, Kalfagiannis N, Muskens OL, de Groot CH(. Room Temperature Phase Transition of W‐Doped VO 2 by Atomic Layer Deposition on 200 mm Si Wafers and Flexible Substrates. Advanced Optical Materials. [DOI: 10.1002/adom.202201326] [Reference Citation Analysis]
2 Lu H, Clark S, Guo Y, Robertson J. The metal–insulator phase change in vanadium dioxide and its applications. Journal of Applied Physics 2021;129:240902. [DOI: 10.1063/5.0027674] [Cited by in Crossref: 4] [Cited by in F6Publishing: 6] [Article Influence: 2.0] [Reference Citation Analysis]
3 Niang KM, Bai G, Lu H, Robertson J. Microstructure scaling of metal–insulator transition properties of VO 2 films. Appl Phys Lett 2021;118:121901. [DOI: 10.1063/5.0039607] [Cited by in Crossref: 3] [Cited by in F6Publishing: 3] [Article Influence: 1.5] [Reference Citation Analysis]
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