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Cited by in F6Publishing
For: Sarles SA, Wright JP, Pei J. Equilibrium analysis of Mott memristor reveals criterion for negative differential resistance. Appl Phys Lett 2021;118:223505. [DOI: 10.1063/5.0049115] [Cited by in Crossref: 2] [Cited by in F6Publishing: 2] [Article Influence: 1.0] [Reference Citation Analysis]
Number Citing Articles
1 Pattanayak M, Hoque MNF, Ho Y, Li W, Fan Z, Bernussi AA. Ultrahigh tunability of resistive switching in strongly correlated functional oxide. Applied Materials Today 2023;30:101642. [DOI: 10.1016/j.apmt.2022.101642] [Reference Citation Analysis]
2 Sung SH, Jeong Y, Oh JW, Shin H, Lee JH, Lee KJ. Bio-plausible memristive neural components towards hardware implementation of brain-like intelligence. Materials Today 2023. [DOI: 10.1016/j.mattod.2022.11.022] [Reference Citation Analysis]
3 Bisquert J. Negative inductor effects in nonlinear two-dimensional systems: Oscillatory neurons and memristors. Chem Phys Rev 2022;3:041305. [DOI: 10.1063/5.0124115] [Reference Citation Analysis]
4 Dragoman M, Dragoman D. Negative differential resistance in novel nanoscale devices. Solid-State Electronics 2022;197:108464. [DOI: 10.1016/j.sse.2022.108464] [Reference Citation Analysis]
5 Luo Z, Bo Y, Sadaf SM, Liu X. Van der Pol oscillator based on NbO 2 volatile memristor: A simulation analysis. Journal of Applied Physics 2022;131:054501. [DOI: 10.1063/5.0073285] [Reference Citation Analysis]
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