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For: Corti E, Gotsmann B, Moselund K, Ionescu AM, Robertson J, Karg S. Scaled resistively-coupled VO2 oscillators for neuromorphic computing. Solid-State Electronics 2020;168:107729. [DOI: 10.1016/j.sse.2019.107729] [Cited by in Crossref: 23] [Cited by in F6Publishing: 23] [Article Influence: 7.7] [Reference Citation Analysis]
Number Citing Articles
1 Pattanayak M, Hoque MNF, Ho Y, Li W, Fan Z, Bernussi AA. Ultrahigh tunability of resistive switching in strongly correlated functional oxide. Applied Materials Today 2023;30:101642. [DOI: 10.1016/j.apmt.2022.101642] [Reference Citation Analysis]
2 Haddad E, Kruzelecky RV, Murzionak P, Jamroz W, Tagziria K, Chaker M, Ledrogoff B. Review of the VO2 smart material applications with emphasis on its use for spacecraft thermal control. Front Mater 2022;9. [DOI: 10.3389/fmats.2022.1013848] [Reference Citation Analysis]
3 Das SK, Nandi SK, Marquez CV, Rúa A, Uenuma M, Puyoo E, Nath SK, Albertini D, Baboux N, Lu T, Liu Y, Haeger T, Heiderhoff R, Riedl T, Ratcliff T, Elliman RG. Physical Origin of Negative Differential Resistance in V(3) O(5) and Its Application as a Solid-State Oscillator. Adv Mater 2022;:e2208477. [PMID: 36461165 DOI: 10.1002/adma.202208477] [Reference Citation Analysis]
4 Jimenez-traves M, Avedillo MJ, Nunez J, Linares-barranco B. Enhancing Storage Capabilities of Oscillatory Neural Networks as Associative Memory. 2022 37th Conference on Design of Circuits and Integrated Circuits (DCIS) 2022. [DOI: 10.1109/dcis55711.2022.9970122] [Reference Citation Analysis]
5 Sun K, Wheeler C, Hillier JA, Ye S, Zeimpekis I, Urbani A, Kalfagiannis N, Muskens OL, de Groot CH(. Room Temperature Phase Transition of W‐Doped VO 2 by Atomic Layer Deposition on 200 mm Si Wafers and Flexible Substrates. Advanced Optical Materials. [DOI: 10.1002/adom.202201326] [Reference Citation Analysis]
6 Prasad N, Mukim P, Madhavan A, Stiles MD. Associative memories using complex-valued Hopfield networks based on spin-torque oscillator arrays. Neuromorph Comput Eng 2022;2:034003. [DOI: 10.1088/2634-4386/ac7d05] [Cited by in Crossref: 1] [Cited by in F6Publishing: 1] [Article Influence: 1.0] [Reference Citation Analysis]
7 Komonov AI, Mantsurov ND, Mutilin SV, Voloshin BV, Seleznev VA. Nanolithography of Amorphous Vanadium Oxide Films Using an Atomic Force Microscope. 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM) 2022. [DOI: 10.1109/edm55285.2022.9855164] [Reference Citation Analysis]
8 Carapezzi S, Boschetto G, Karg S, Todri-sanial A. Electro-thermal simulations of beyond-CMOS vanadium dioxide devices and oscillators. MRS Communications. [DOI: 10.1557/s43579-022-00196-3] [Cited by in F6Publishing: 1] [Reference Citation Analysis]
9 Fang SL, Han CY, Han ZR, Ma B, Cui YL, Liu W, Fan SQ, Li X, Wang XL, Zhang GH, Huang XD, Geng L. An Artificial Spiking Afferent Neuron System Achieved by 1M1S for Neuromorphic Computing. IEEE Trans Electron Devices 2022;69:2346-52. [DOI: 10.1109/ted.2022.3159270] [Cited by in Crossref: 1] [Cited by in F6Publishing: 1] [Article Influence: 1.0] [Reference Citation Analysis]
10 Luo Z, Bo Y, Sadaf SM, Liu X. Van der Pol oscillator based on NbO 2 volatile memristor: A simulation analysis. Journal of Applied Physics 2022;131:054501. [DOI: 10.1063/5.0073285] [Reference Citation Analysis]
11 Slusar T, Kim B, Roh TM, Kim H. Studying the near-room temperature insulator-to-metal switching in ultrathin VO2 films on (001) TiO2. 2022 International Conference on Electronics, Information, and Communication (ICEIC) 2022. [DOI: 10.1109/iceic54506.2022.9748845] [Reference Citation Analysis]
12 Shi Y, Chen L. Intrinsic Insulator-Metal Phase Oscillations. Phys Rev Applied 2022;17. [DOI: 10.1103/physrevapplied.17.014042] [Reference Citation Analysis]
13 Nunez J, Quintana JM, Avedillo MJ, Jimenez M, Todri-sanial A, Corti E, Karg S, Linares-barranco B. Insights Into the Dynamics of Coupled VO2 Oscillators for ONNs. IEEE Trans Circuits Syst II 2021;68:3356-3360. [DOI: 10.1109/tcsii.2021.3085133] [Reference Citation Analysis]
14 Shi Y, Duwel AE, Callahan DM, Sun Y, Hong FA, Padmanabhan H, Gopalan V, Engel-herbert R, Ramanathan S, Chen L. Dynamics of voltage-driven oscillating insulator-metal transitions. Phys Rev B 2021;104. [DOI: 10.1103/physrevb.104.064308] [Cited by in Crossref: 4] [Cited by in F6Publishing: 4] [Article Influence: 2.0] [Reference Citation Analysis]
15 Iqbal S, Duy LT, Kang H, Singh R, Kumar M, Park J, Seo H. Femtojoule‐Power‐Consuming Synaptic Memtransistor Based on Mott Transition of Multiphasic Vanadium Oxides. Adv Funct Materials 2021;31:2102567. [DOI: 10.1002/adfm.202102567] [Cited by in Crossref: 6] [Cited by in F6Publishing: 7] [Article Influence: 3.0] [Reference Citation Analysis]
16 [DOI: 10.1109/isvlsi51109.2021.00066] [Cited by in Crossref: 2] [Cited by in F6Publishing: 2] [Article Influence: 1.0] [Reference Citation Analysis]
17 Lu H, Clark S, Guo Y, Robertson J. The metal–insulator phase change in vanadium dioxide and its applications. Journal of Applied Physics 2021;129:240902. [DOI: 10.1063/5.0027674] [Cited by in Crossref: 4] [Cited by in F6Publishing: 6] [Article Influence: 2.0] [Reference Citation Analysis]
18 Rosca T, Qaderi F, Riccardi M, Martin OJ, Ionescu AM. An Experimental Study of the Photoresponse of 1T-1R Oscillators Based on Vanadium Dioxide: Towards Spiking Sensing Systems. 2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers) 2021. [DOI: 10.1109/transducers50396.2021.9495742] [Cited by in Crossref: 1] [Cited by in F6Publishing: 1] [Article Influence: 0.5] [Reference Citation Analysis]
19 Corti E, Delacour C, Todri-sanial A, Karg S. Frequency Injection Locking-Controlled Oscillations for Synchronized Operations in VO2 Crossbar Devices. 2021 Device Research Conference (DRC) 2021. [DOI: 10.1109/drc52342.2021.9467129] [Reference Citation Analysis]
20 Niang KM, Bai G, Lu H, Robertson J. Microstructure scaling of metal–insulator transition properties of VO 2 films. Appl Phys Lett 2021;118:121901. [DOI: 10.1063/5.0039607] [Cited by in Crossref: 3] [Cited by in F6Publishing: 3] [Article Influence: 1.5] [Reference Citation Analysis]
21 Bai G, Niang KM, Robertson J. Preparation of atomic layer deposited vanadium dioxide thin films using tetrakis(ethylmethylamino) vanadium as precursor. Journal of Vacuum Science & Technology A 2020;38:052402. [DOI: 10.1116/6.0000353] [Cited by in Crossref: 4] [Cited by in F6Publishing: 4] [Article Influence: 1.3] [Reference Citation Analysis]
22 Corti E, Khanna A, Niang K, Robertson J, Moselund KE, Gotsmann B, Datta S, Karg S. Time-Delay Encoded Image Recognition in a Network of Resistively Coupled VO₂ on Si Oscillators. IEEE Electron Device Lett 2020;41:629-32. [DOI: 10.1109/led.2020.2972006] [Cited by in Crossref: 17] [Cited by in F6Publishing: 17] [Article Influence: 5.7] [Reference Citation Analysis]