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Cited by in F6Publishing
For: Han CY, Han ZR, Fang SL, Fan SQ, Yin JQ, Liu WH, Li X, Yang SQ, Zhang GH, Wang XL, Geng L. Characterization and Modelling of Flexible VO 2 Mott Memristor for the Artificial Spiking Warm Receptor. Adv Materials Inter. [DOI: 10.1002/admi.202200394] [Cited by in F6Publishing: 1] [Reference Citation Analysis]
Number Citing Articles
1 Carapezzi S, Delacour C, Plews A, Nejim A, Karg S, Todri-Sanial A. Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications. Sci Rep 2022;12:19377. [PMID: 36371590 DOI: 10.1038/s41598-022-23629-4] [Reference Citation Analysis]
2 Mutilin SV, Yakovkina LV, Seleznev VA, Prinz VY. Kinetics of Catalyst-Free and Position-Controlled Low-Pressure Chemical Vapor Deposition Growth of VO2 Nanowire Arrays on Nanoimprinted Si Substrates. Materials 2022;15:7863. [DOI: 10.3390/ma15217863] [Reference Citation Analysis]