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Park B, Hwang Y, Kwon O, Hwang S, Lee JA, Choi D, Lee S, Kim AR, Cho B, Kwon J, Lee JI, Kim Y. Robust 2D MoS2 Artificial Synapse Device Based on a Lithium Silicate Solid Electrolyte for High-Precision Analogue Neuromorphic Computing. ACS Appl Mater Interfaces 2022. [DOI: 10.1021/acsami.2c14080] [Reference Citation Analysis]
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Kang DY, Rani A, Yoo KJ, Kim TG. Improved threshold switching characteristics of vanadium oxide/oxynitride-based multilayer selector in a cross-point array. Journal of Alloys and Compounds 2022;922:166192. [DOI: 10.1016/j.jallcom.2022.166192] [Reference Citation Analysis]
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Iqbal S, Kumar M, Sial QA, Duy LT, Seo H. Thermal Nanostructuring for Rectifying Resistive Switching Behaviors of Cobalt Oxide Neuromorphic Devices. ACS Appl Electron Mater 2022. [DOI: 10.1021/acsaelm.2c01167] [Reference Citation Analysis]
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Wu Z, Shi P, Xing R, Yu T, Zhao L, Wei L, Wang D, Yan S, Tian Y, Bai L, Chen Y. Flexible Mott Synaptic Transistor on Polyimide Substrate for Physical Neural Networks. Adv Elect Materials. [DOI: 10.1002/aelm.202200078] [Cited by in Crossref: 3] [Cited by in F6Publishing: 3] [Article Influence: 3.0] [Reference Citation Analysis]
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Duy LT, Kang H, Shin HC, Han S, Singh R, Seo H. Multifunctional Nanohybrid of Alumina and Indium Oxide Prepared Using the Atomic Layer Deposition Technique. ACS Appl Mater Interfaces 2021;13:59115-25. [PMID: 34860496 DOI: 10.1021/acsami.1c18623] [Reference Citation Analysis]
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