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For: Iqbal S, Duy LT, Kang H, Singh R, Kumar M, Park J, Seo H. Femtojoule‐Power‐Consuming Synaptic Memtransistor Based on Mott Transition of Multiphasic Vanadium Oxides. Adv Funct Materials 2021;31:2102567. [DOI: 10.1002/adfm.202102567] [Cited by in Crossref: 6] [Cited by in F6Publishing: 7] [Article Influence: 3.0] [Reference Citation Analysis]
Number Citing Articles
1 Hong WK, Jang HS, Yoon J, Choi WJ. Modulation of Switching Characteristics in a Single VO(2) Nanobeam with Interfacial Strain via the Interconnection of Multiple Nanoscale Channels. ACS Appl Mater Interfaces 2023;15:11296-303. [PMID: 36787543 DOI: 10.1021/acsami.2c21367] [Reference Citation Analysis]
2 Fu J, Wang J, He X, Ming J, Wang L, Wang Y, Shao H, Zheng C, Xie L, Ling H. Pseudo-transistors for emerging neuromorphic electronics. Science and Technology of Advanced Materials 2023. [DOI: 10.1080/14686996.2023.2180286] [Reference Citation Analysis]
3 Haddad E, Kruzelecky RV, Murzionak P, Jamroz W, Tagziria K, Chaker M, Ledrogoff B. Review of the VO2 smart material applications with emphasis on its use for spacecraft thermal control. Front Mater 2022;9. [DOI: 10.3389/fmats.2022.1013848] [Reference Citation Analysis]
4 Kumbhakar S, Islam S, Mao Z, Wang Y, Ghosh A. Glassy electrons at the first-order Mott metal-insulator transition. Phys Rev B 2022;106:L201112. [DOI: 10.1103/physrevb.106.l201112] [Reference Citation Analysis]
5 Park B, Hwang Y, Kwon O, Hwang S, Lee JA, Choi D, Lee S, Kim AR, Cho B, Kwon J, Lee JI, Kim Y. Robust 2D MoS2 Artificial Synapse Device Based on a Lithium Silicate Solid Electrolyte for High-Precision Analogue Neuromorphic Computing. ACS Appl Mater Interfaces 2022. [DOI: 10.1021/acsami.2c14080] [Reference Citation Analysis]
6 Kang DY, Rani A, Yoo KJ, Kim TG. Improved threshold switching characteristics of vanadium oxide/oxynitride-based multilayer selector in a cross-point array. Journal of Alloys and Compounds 2022;922:166192. [DOI: 10.1016/j.jallcom.2022.166192] [Reference Citation Analysis]
7 Iqbal S, Kumar M, Sial QA, Duy LT, Seo H. Thermal Nanostructuring for Rectifying Resistive Switching Behaviors of Cobalt Oxide Neuromorphic Devices. ACS Appl Electron Mater 2022. [DOI: 10.1021/acsaelm.2c01167] [Reference Citation Analysis]
8 Wu Z, Shi P, Xing R, Yu T, Zhao L, Wei L, Wang D, Yan S, Tian Y, Bai L, Chen Y. Flexible Mott Synaptic Transistor on Polyimide Substrate for Physical Neural Networks. Adv Elect Materials. [DOI: 10.1002/aelm.202200078] [Cited by in Crossref: 3] [Cited by in F6Publishing: 3] [Article Influence: 3.0] [Reference Citation Analysis]
9 Sial QA, Kumar M, Iqbal S, Kalanur SS, Seo H. Artificial Nociceptor Using Liquid Ionic Memory. Adv Elect Materials. [DOI: 10.1002/aelm.202101066] [Cited by in Crossref: 1] [Cited by in F6Publishing: 2] [Article Influence: 1.0] [Reference Citation Analysis]
10 Mohebbi E, Pavoni E, Mencarelli D, Stipa P, Pierantoni L, Laudadio E. Insights into first-principles characterization of the monoclinic VO 2 (B) polymorph via DFT + U calculation: electronic, magnetic and optical properties. Nanoscale Adv 2022;4:3634-46. [DOI: 10.1039/d2na00247g] [Reference Citation Analysis]
11 Duy LT, Kang H, Shin HC, Han S, Singh R, Seo H. Multifunctional Nanohybrid of Alumina and Indium Oxide Prepared Using the Atomic Layer Deposition Technique. ACS Appl Mater Interfaces 2021;13:59115-25. [PMID: 34860496 DOI: 10.1021/acsami.1c18623] [Reference Citation Analysis]
12 Yan X, Qian JH, Sangwan VK, Hersam MC. Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems. Adv Mater 2021;:e2108025. [PMID: 34813677 DOI: 10.1002/adma.202108025] [Cited by in Crossref: 8] [Cited by in F6Publishing: 6] [Article Influence: 4.0] [Reference Citation Analysis]