Peripheral dose measurement in high-energy photon radiotherapy with the implementation of MOSFET

doi:10.4329/wjr.v2.i11.434

Advanced Search

BPG is committed to discovery and dissemination of knowledge

Home / Archive / Volume 2, Issue 11

This Article

Citation of this article

Corresponding Author of This Article

Article-Type of This Article

Open-Access Policy of This Article

Times Cited Counts in Google of This Article

Number of Hits and Downloads for This Article

Total Article Views (5433)

All Articles published online

The chart showing PDF series, HTML series, Figures (1-6) series, Tables (1-1) series.

Item

Count

PDF

348

HTML

4506

Figures (1-6)

290

Tables (1-1)

289

Sum=5433

Nov 28, 2010 (publication date) through Feb 3, 2025

Times Cited of This Article

Times Cited (10)

Journal Information of This Article

Publication Name

World Journal of Radiology

ISSN

1949-8470

Publisher of This Article

Baishideng Publishing Group Inc, 7041 Koll Center Parkway, Suite 160, Pleasanton, CA 94566, USA

Original Article

World J Radiol. Nov 28, 2010; 2(11): 434-439
Published online Nov 28, 2010. doi: 10.4329/wjr.v2.i11.434

Full Size Figure Download Figure

Figure 5 Percentage peripheral dose obtained with metal oxide semiconductor field effect transistor and the ionization chamber for various field sizes as a function of distance from the surface using the (A) 6 MV and (B) 18 MV beam. MOSFET: Metal oxide semiconductor field effect transistor.

Citation: Vlachopoulou V, Malatara G, Delis H, Theodorou K, Kardamakis D, Panayiotakis G. Peripheral dose measurement in high-energy photon radiotherapy with the implementation of MOSFET. World J Radiol 2010; 2(11): 434-439
URL: https://www.wjgnet.com/1949-8470/full/v2/i11/434.htm
DOI: https://dx.doi.org/10.4329/wjr.v2.i11.434